Roughening of the surface of an Si layer grown on an Si(111)-(7 × 7) superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference10 articles.
1. Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction
2. Epitaxial Crystal Growth, Part 2;Shigeta,1991
3. Critical thickness for growth of epitaxial grains in silicon film deposited on superlattice surface of silicon (111)
4. Annealing effect on an amorphous Si film deposited on a 7×7 superlattice surface of Si(111) studied with low‐energy electron diffraction
5. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of metallic Au adsorbed islands on the Si(111)-(7 × 7) substrate;Journal of Physics: Conference Series;2007-04-01
2. Surface roughening induced by a characteristic surface structure of a Si film grown on Si(111);Surface Science;2001-06
3. Absence of a step-edge barrier on a polar semiconductor surface with reconstruction;Physical Review B;2000-07-15
4. Monte Carlo study of Si(111) homoepitaxy;Physical Review B;1998-06-15
5. Observation of RHEED rocking curves during Si/Si(111) film growth;Surface Science;1998-05
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