Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation-Reference-Cited by-同舟云学术

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Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation

Published:2022-03 Issue: Volume:209 Page:114370
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Field Daniel E.,Beale Ryan,Getzler Naomi,Pomeroy James W.,Leide Alexander J.,Francis Daniel,Twitchen Daniel,Faili Firooz,Liu Dong,Kuball Martin

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference24 articles.

1. Formation and characterization of 4-inch GaN-on-diamond substrates

2. Characterization of the Interfacial Toughness in a Novel “GaN-on-Diamond” Material for High-Power RF Devices

3. Heteroepitaxial Beta-Ga2O3on 4H-SiC for an FET With Reduced Self Heating

4. Raman Thermography of Peak Channel Temperature in $\beta$ -Ga2O3 MOSFETs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulation;Materials Today Communications;2024-03

2. The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN;Journal of Alloys and Compounds;2024-01

3. Extreme mechanics of nanoscale diamond towards functional device applications;Extreme Mechanics Letters;2023-01

4. Preparation strategy for low-stress and uniform SiC-on-diamond wafer: A silicon nitride dielectric layer;Ceramics International;2022-12

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