Thin film reaction and interface structure of Cu on Si-Reference-Cited by-同舟云学术

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Thin film reaction and interface structure of Cu on Si

Published:1992-01 Issue: Volume:56-58 Page:463-468
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Echigoya J.,Enoki H.,Satoh T.,Waki T.,Ohmi T.,Otsuki M.,Shibata T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. First phase nucleation in silicon–transition‐metal planar interfaces

2. Amorphous Ti‐Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayers

3. Growth kinetics of amorphous interlayers by solid‐state diffusion in ultrahigh vacuum deposited polycrystalline Nb and Ta thin films on (111)Si

4. Low Temperature Reactions at Si-Metal Contacts –From SiO2Growth due to Si–Au Reaction to the Mechanism of Silicide Formation

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1. Fluorine-free Plasma Enhanced Atomic Layer Deposited Ultrathin Tungsten Nitride Thin Films for Dual Diffusion Barrier Performance;ACS Applied Nano Materials;2023-11-17

2. Growth and annealing effect on the Cu thin film deposited on Si (0 0 1) surface;Journal of Crystal Growth;2022-05

3. Effect of incident angle on the microstructure proprieties of Cu thin film deposited on Si (001) substrate;Thin Solid Films;2021-03

4. Molecular Dynamic Behavior of Lithium Atoms in a Flat Silicene Pore on a Copper Substrate;Russian Journal of Physical Chemistry B;2020-07

5. Morphology and surface properties of Cu thin film on Si (001);Thin Solid Films;2020-03

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