XPD study of atomic intermixing at the Ge/Si(001) interface-Reference-Cited by-同舟云学术

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XPD study of atomic intermixing at the Ge/Si(001) interface

Published:1996-08 Issue: Volume:102 Page:102-106
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Davoli I.,Gunnella R.,Castrucci P.,Pinto N.,Bernardini R.,De Crescenzi M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Defects in epitaxial multilayers

2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

3. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)

4. Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

5. Si indiffusion on Ge(100)-(2×1) studied by core-level photoemission

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC($11\bar{2}0$) heterojunction;Japanese Journal of Applied Physics;2016-07-06

2. Structural characterization of annealed Si/Ge nanostructures using Raman spectroscopy, XRR and AFM;Journal of Physics D: Applied Physics;2006-11-03

3. Annealing induced structural changes in electron beam evaporated Si/Ge multilayers;The European Physical Journal Applied Physics;2006-03-23

4. Nanostructure of Ge deposited on Si(001): a study by XPS peak shape analysis and AFM;Thin Solid Films;1999-01

5. Short period (Si6Ge4)p superlattices: photoluminescence and electron microscopy study;Journal of Luminescence;1998-12

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