Laser-induced photochemical etching of InP by HBr and HCl
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference14 articles.
1. Photochemical dry etching of GaAs
2. Dry, laser‐assisted rapid HBr etching of GaAs
3. Properties of laser-induced thermochemical etching of InP
4. Laser Annealing of Semiconductors;Poate,1982
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A laser dry etch process for smooth continous relief structures in InP;APPL PHYS A-MATER;1996
2. A laser dry etch process for smooth continuous relief structures in InP;Applied Physics A Materials Science & Processing;1996-11
3. Characterization of ultraviolet excited Br[sup ∗]-radical etching of InGaAs/InAlAs material system;Journal of Applied Physics;1996
4. Excimer Laser Microstructuring of InP and GaAs Semiconductor Compounds;Laser in Forschung und Technik / Laser in Research and Engineering;1996
5. Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
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