In-situ doping of silicon using the gas immersion laser doping (GILD) process
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. Hot-electron-induced degradation of conventional, minimum overlap, LDD and DDD N-channel MOSFETs
2. Channeling effect of low energy boron implant in
3. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
4. Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)
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