Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation-Reference-Cited by-同舟云学术

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Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation

Published:1987-10 Issue:1-4 Volume:30 Page:390-396
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chater R.J.,Kilner J.A.,Scheid E.,Cristoloveneau S.,Hemment P.L.F.,Reeson K.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. Proc. E. MRS;Marsh,1986

2. SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon

3. SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

4. SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N

5. Semiconductor Silicon 1986;Chater,1986

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Implantation in Compound Semiconductor and Buried Layer Synthesis;Ion Implantation: Basics to Device Fabrication;1995

2. Investigation of multilayer SOI structures by electroreflectance spectroscopy;Materials Letters;1993-12

3. Thin buried oxide in oxygen-implanted silicon;Ceramics International;1993-01

4. Substrates: The material bases of microelectronics and nanoelectronics;Progress in Quantum Electronics;1993-01

5. Synthesis of buried insulating layers in silicon by ion implantation;Materials Chemistry and Physics;1992-06

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