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Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

  • Published:1996-07 Issue: Volume:100-101 Page:403-406
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Makimoto Toshiki,Kobayashi Naoki

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001);Journal of Applied Physics;1999-07

2. Nitridation of GaAs (001) Surface Studied by Auger Electron Spectroscopy;Japanese Journal of Applied Physics;1999-04-30

3. Nitridation of GaAs(001) surface: Auger electron spectroscopy and reflection high-energy electron diffraction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

4. Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy;MRS Internet Journal of Nitride Semiconductor Research;1999

5. Synchrotron radiation photoemission spectroscopy studies of the thermal nitridation of GaAs(100) with ammonia;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
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