Combined photochemical processes for silicon technology: substrate cleaning, silicon dioxide deposition and annealing-Reference-Cited by-同舟云学术

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Combined photochemical processes for silicon technology: substrate cleaning, silicon dioxide deposition and annealing

Published:1994-08 Issue:4 Volume:78 Page:437-443
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fominski V.Yu.,Markeev A.M.,Naumenko O.I.,Nevolin V.N.,Alyokhin A.P.,Vyukov L.A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. ArF laser induced CVD of SiO2 films: a search for the best suitable precursors

2. Film growth mechanism of photo-chemical vapor deposition

3. SiO2 deposition by direct photolysis at 185 nm of N2O and SiH4

4. Ultraviolet-induced chemical vapor deposition of silica films studied by surface-sensitive multiple-internal-reflection spectroscopy

5. A comparison of SiO2 thin-film UVCVD rates and mechanisms from SiH4/O2 and SiH4/N2O precursor gases by surface-sensitive infrared spectroscopy

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1. Pulsed laser deposition of MoSe x (Ni)/a-C tribological coatings;SPIE Proceedings;2003-09-03

2. Plasmachemical Dehydroxylation of High Surface Area Silica at Room Temperature;The Journal of Physical Chemistry B;2001-03-10

3. A planar XeCl-exilamp pumped by a low-pressure glow discharge;Technical Physics;1997-12

4. Nonequilibrium Plasma Activation of Supported Cr(III) Phillips Catalyst Precursors;The Journal of Physical Chemistry B;1997-11-01

5. Photochemical removal of organic contaminants from silicon surface at room temperature;Applied Physics Letters;1996-04-15

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