Gate materials consideration for submicron CMOS-Reference-Cited by-同舟云学术

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Gate materials consideration for submicron CMOS

Published:1989-09 Issue:1-4 Volume:38 Page:416-428
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ting C.Y.,Davari B.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. Proc. Intern. Conf. on S/C and IC Technology;Ting,1986

2. Transconductance degradation in thin-Oxide MOSFET's

3. A new tungsten gate process for VLSI applications

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Polycrystalline Nickel Silicide Films as a Gate Material;Journal of The Electrochemical Society;2001

2. Polycrystalline p+-SixGe1-x as a Single Gate in CMOS Technology;Physica Scripta;1999

3. Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope;Japanese Journal of Applied Physics;1998-10-15

4. Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/ films;IEEE Electron Device Letters;1997-09

5. Contaminations and Impurities in DC Magnetron Sputtered WSix Films on SiO2;Physica Status Solidi (a);1995-02-16

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