Porous n-silicon produced by photoelectrochemical etching-Reference-Cited by-同舟云学术

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Porous n-silicon produced by photoelectrochemical etching

Published:1993-03 Issue: Volume:65-66 Page:408-414
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lévy-Clément C.,Lagoubi A.,Ballutaud D.,Ozanam F.,Chazalviel J.-N.,Neumann-Spallart M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Photoelectrochemical etching of silicon

2. Efficiency and Stability Enhancement of n‐Si Photoelectrodes in Aqueous Solution

3. Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution

4. Porous Silicon Formation and Electropolishing of Silicon by Anodic Polarization in HF Solution

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of microporous silicon in straight macropore on n-type silicon under front side illumination;Surface and Coatings Technology;2019-05

2. Enhancing light trapping of macroporous silicon by alkaline etching: application for the fabrication of black Si nanospike arrays;Materials Chemistry Frontiers;2017

3. Silicon Porosification: Approaches to PSi Parameters Control;Porous Silicon: From Formation to Application: Formation and Properties, Volume One;2015-10-29

4. Photoactive Porous Silicon Nanopowder;ACS Applied Materials & Interfaces;2013-04-04

5. (Research Award of the Energy and Technology Division) (Photo)Electrochemistry in the Service of Solar Energy Conversion;ECS Transactions;2011-04-25

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