Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE-Reference-Cited by-同舟云学术

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Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE

Published:1992-01 Issue: Volume:54 Page:493-496
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Armstrong S.R.,Pemble M.E.,Taylor A.G.,Joyce B.A.,Neave J.H.,Zhang J.,Klug D.A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs

2. Optical reflectance measurements of transients during molecular-beam epitaxial growth on (001) GaAs

3. Optical studies of molecular-beam epitaxy growth of GaAs and AlAs

4. Reflectance-difference spectroscopy: a new probe of crystal growth by MBE and OMCVD

5. In situ monitoring of crystal growth by reflectance difference spectroscopy

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3. Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring;Applied Surface Science;2015-12

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5. A universal theoretical approach for examining the efficiency of doping processes in semiconductors;Journal of Applied Physics;2009-06

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