Interfacial layers of InP/Si heteroepitaxy-Reference-Cited by-同舟云学术

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Interfacial layers of InP/Si heteroepitaxy

Published:1990-01 Issue: Volume:41-42 Page:598-603
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Horikawa H.,Akiyama M.,Onozawa S.,Kawai Y.,Sakuta M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

2. Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition

3. High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates

4. Hetero-epitaxial growth of InP on Si substrates by LP-MOVPE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-09

2. Selective growth of InP on localized areas of silicon (100) substrate by molecular beam epitaxy;physica status solidi (c);2008-07

3. Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy;Thin Solid Films;2007-04

4. Relaxed lattice-mismatched growth of III–V semiconductors;Progress in Crystal Growth and Characterization of Materials;1991-01

5. The Heteroepitaxy and Characterization of Inp and GaInP on Silicon for Solar Cell Applications;MRS Proceedings;1990

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