The physics of hot-electron degradation of Si MOSFET's: Can we understand it?-Reference-Cited by-同舟云学术

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The physics of hot-electron degradation of Si MOSFET's: Can we understand it?

Published:1989-10 Issue:1-4 Volume:39 Page:578-596
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fischetti M.V.,Laux S.E.,Dimaria D.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

1. Hot-electron emission in N-channel IGFET's

2. Hot-electron injection into the oxide in n-channel MOS devices

3. Physics of Semiconductor Devices;Sze,1981

4. An investigation of steady-state velocity overshoot in silicon

5. Problems related to p-n junctions in silicon

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