Non-destructive and quantitative analysis of buried interfaces of Si-related crystalline multilayers using high-energy ion scattering-Reference-Cited by-同舟云学术

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Non-destructive and quantitative analysis of buried interfaces of Si-related crystalline multilayers using high-energy ion scattering

Published:1992-01 Issue: Volume:56-58 Page:656-660
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ito T.,Kamiya E.,Moon J.,Hiraki A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Surface Science: Recent Progress and Perspectives;Feldman,1980

2. Semiconductor-Based Heterostructures;Feldman,1986

3. Material Analysis by Ion Channeling;Feldman,1982

4. Monte Carlo Channeling Calculations

5. Calculation of surface peak intensity in MeV ion scattering. II

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