Comparative AES and RHEED study of the formation of Pd silicide on clean and oxide covered Si(100) and (111) surfaces
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference10 articles.
1. Influence of oxygen on the formation of refractory metal silicides
2. Interaction of gold, palladium and Au-Pd alloy deposits with oxidized Si(100) substrates
3. The Effects of Interfacial SiO2 on Pd2Si Formation
4. R. Anton, U. Neukirch and M. Harsdorff, submitted.
5. Electron beam induced effects at silicon-transition metal silicide interfaces
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1. Interfacial Silicide Formation and Stress Evolution during Sputter Deposition of Ultrathin Pd Layers on a-Si;ACS Applied Materials & Interfaces;2019-09-24
2. In-situ observation of Pd2Si islands on Si by UHV–TEM/STM;Journal of Crystal Growth;2002-04
3. Structural observation of Pd silicide islands on Si (111) surfaces with UHV‐TEM/STM;Journal of Electron Microscopy;2002-03-27
4. In-situ observation of deposition process of Pd on clean Si surfaces by ultrahigh vacuum-transmission electron microscopy/scanning tunneling microscopy;Thin Solid Films;2001-11
5. CRITERION FOR SILICIDE FORMATION IN TRANSITION METAL-SILICON DIFFUSION COUPLES;CAN METALL QUART;1995
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