Electrochemical etching and profiling of silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference20 articles.
1. Bestimmung von Ionenimplantationsprofilen aus der Messung der differentiellen Kapazität am Halbleiter—Elektrolyt-Kontakt
2. Electrochemical carrier concentration profiling in silicon
3. The Electrolyte‐Silicon Interface; Anodic Dissolution and Carrier Concentration Profiling
4. Electrochemical capacitance characterization of n-type gallium arsenide
5. An automatic carrier concentration profile plotter using an electrochemical technique
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Choice of electrolyte for doping profiling in Si by electrochemical C–V technique;Applied Surface Science;2001-03
2. Capacitance of semiconductor-electrolyte junction and its frequency dependence;Applied Physics A Materials Science & Processing;1996-11
3. Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements;Journal of The Electrochemical Society;1995-02-01
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