Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies-Reference-Cited by-同舟云学术

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Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies

Published:1993-03 Issue: Volume:65-66 Page:667-675
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Brillson L.J.,Vitomirov I.M.,Raisanen A.,Chang S.,Viturro R.E.,Kirchner P.D.,Pettit G.D.,Woodall J.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. The structure and properties of metal-semiconductor interfaces

2. Metal-Semiconductor Contacts;Rhoderick,1988

3. New method for control of Schottky‐barrier height

4. Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs

5. Variation of n-GaAs (100) interface Fermi level by Ge and Si overlayers

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky barrier heights at polar metal/semiconductor interfaces;Physical Review B;2003-08-22

2. Yellow luminescence and Fermi level pinning in GaN layers;Applied Physics Letters;2000

3. Structural and compositional dependences of the Schottky barrier inAl/Ga1−xAlxAs(100)and (110) junctions;Physical Review B;1999-03-15

4. Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures;Journal of Electronic Materials;1994-09

5. Strain relaxation induced deep levels in In1−xGaxAs thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07

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