Characterization of alloy composition in Ga1-xAlxAs/GaAs structures: comparison of photovoltage, X-ray, SIMS and RHEED techniques-Reference-Cited by-同舟云学术

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Characterization of alloy composition in Ga1-xAlxAs/GaAs structures: comparison of photovoltage, X-ray, SIMS and RHEED techniques

Published:1991-06 Issue:1-4 Volume:50 Page:428-433
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee D.,Barnett S.J.,Pitt A.D.,Houlton M.R.,Smith G.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. Sensitivity of X-ray diffractometry for strain depth profiling in III–V heterostructures

2. Factors influencing the presence and detection of compositional grading at semiconductor hetero-epitaxial interfaces

3. Heterostructure Lasers;Casey,1978

4. Optical properties of AlxGa1−xAs

5. Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1−xAs grown by molecular‐beam epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-time algorithm to determine the period and phase of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during epitaxial growth;Journal of Crystal Growth;2017-11

2. Monitoring surface roughness during film growth using modulated RHEED intensity oscillations;Journal of Crystal Growth;2017-11

3. Insitutechnique for measuring Ga segregation and interface roughness at GaAs/AlGaAs interfaces;Journal of Applied Physics;1994-02-15

4. Atomic Spectrometry Update—Clinical and Biological Materials, Foods and Beverages;J. Anal. At. Spectrom.;1992

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