Determination of Ca-As bonding at the CaF2/GaAs interface-Reference-Cited by-同舟云学术

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Determination of Ca-As bonding at the CaF2/GaAs interface

Published:1988-09 Issue: Volume:33-34 Page:1073-1080
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yamada Y.,Oshima M.,Maeyama S.,Kawamura T.,Miyahara T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

2. Quantitative chemical analysis by ESCA

3. Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103

4. Photoemission studies of the effect of temperature on the Au–GaAs(110) interface

5. Photoemission from mbe grown III–V surfaces and interfaces

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1. BaCaF2/III–V semiconductor broadband distributed Bragg reflectors for long-wavelength VCSEL and SESAM devices;Applied Physics B;2014-09-27

2. Silicon–Insulator Interface Barriers;Internal Photoemission Spectroscopy;2014

3. References;Internal Photoemission Spectroscopy;2008

4. MBE growth of fluorides;Microelectronics Journal;1996-07

5. Initial stages of the growth ofSrF2on InP;Physical Review B;1995-11-15

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