Electrical characteristics of silver/silicon contacts-Reference-Cited by-同舟云学术

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Electrical characteristics of silver/silicon contacts

Published:1993-06 Issue: Volume:70-71 Page:422-427
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Weitering H.H.,Sullivan J.P.,Carolissen R.J.,Graham W.R.,Tung R.T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Metal-Semiconductor Contacts;Rhoderick,1988

2. Surface States and Rectification at a Metal Semi-Conductor Contact

3. Schottky Barrier Heights and the Continuum of Gap States

4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

5. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces

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2. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function;Physical Review B;2016-04-07

3. Influence of1×1defects on Schottky barrier height at theAg/Si(111)7×7interface;Physical Review B;2002-08-01

4. Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures;Physica B: Condensed Matter;2001-12

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