Zr-silicide formation during the epitaxial growth of Y-stabilized zirconia films on Si(100) and its avoidance by ion beam assisted deposition at a reduced temperature-Reference-Cited by-同舟云学术

Zr-silicide formation during the epitaxial growth of Y-stabilized zirconia films on Si(100) and its avoidance by ion beam assisted deposition at a reduced temperature

Published:1996-05 Issue:1 Volume:99 Page:51-57
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Koch T.,Ziemann P.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Superconducting Y1Ba2Cu3O7−xfilms on Si

2. High critical currents in strained epitaxial YBa2Cu3O7−δon Si

3. High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)

4. Epitaxial growth of yttria‐stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

5. Physical and electrical properties of yttria-stabilized zirconia epitaxial thin films deposited by ion beam sputtering on silicon

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