Pressure-Controlled Layer-by-Layer to Continuous Oxidation of ZrS<sub>2</sub>(001) Surface-Reference-Cited by-同舟云学术

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Pressure-Controlled Layer-by-Layer to Continuous Oxidation of ZrS₂(001) Surface

Published:2023-04-13 Issue:8 Volume:17 Page:7576-7583
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Yang Liqiu¹,Jaramillo Rafael²^ORCID,Kalia Rajiv K.¹,Nakano Aiichiro¹^ORCID,Vashishta Priya¹^ORCID

Affiliation:

1. Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089-0242, United States

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c12724

Reference44 articles.

1. Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

2. Growth and band gap determination of theZrSxSe2−xsingle crystal series

3. Electronics based on two-dimensional materials

4. Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts

5. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

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