Real time in situ observation of (001)GaAs in OMCVD by reflectance difference spectroscopy-Reference-Cited by-同舟云学术

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Real time in situ observation of (001)GaAs in OMCVD by reflectance difference spectroscopy

Published:1992-01 Issue: Volume:60-61 Page:534-543
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kamiya Itaru,Aspnes D.E.,Tanaka H.,Florez L.T.,Colas E.,Harbison J.P.,Bhat R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

1. Bonding direction and surface‐structure orientation on GaAs (001)

2. Disorder on GaAs(001) surfaces prepared by molecular beam epitaxy

3. GaAs(001)−c(4×4): A chemisorbed structure

4. Molecular Beam Epitaxy and Heterostructures;Joyce,1985

5. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy;Applied Surface Science;2018-05

2. A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring;Measurement Science and Technology;2015-10-12

3. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth;APL Materials;2014-03

4. Free-electron response in reflectance anisotropy spectra;Physical Review B;2006-11-27

5. Self-organized growth on GaAs surfaces;Materials Science and Engineering: R: Reports;2004-12

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