Stoichiometric changes in the surface of (100) cubic SiC caused by ion bombardment and annealing
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference16 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
3. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
4. AES and LEED study of the zinc blende SiC(100) surface
5. Surface studies of epitaxial β‐SiC on Si(100)
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