Impedance spectroscopy coupled with voltammetry for quantitative evaluation of temperature and voltage dependent parameters of a silicon solar cell

Author:

Garland J.E.,Crain D.J.,Roy D.

Funder

Army Research Office

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference35 articles.

1. Temperature dependence of shunt resistance in photovoltaic devices;Banerjee;Appl. Phys. Lett.,1986

2. Review and tests of methods for the determination of the solar cell junction ideality factors;Bashahu;Solar Energy,2007

3. Shunt types in crystalline silicon solar cells;Breitenstein;Prog. Photovolt: Res. Appl.,2004

4. Breitenstein, O., Altermatt, P., Ramspeck, K., Schenk, A., 2006. The origin of ideality factors n>2 of shunts and surfaces in the dark I–V curves of Si solar cells. In: Proc. 21st Eur. PVSEC, Dresden, pp. 625–628.

5. Defect induced non-ideal dark I–V characteristics of solar cells;Breitenstein;Superlatt. Microstruct.,2009

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