Potential-induced degradation of Cu(In,Ga)Se2 can occur by shunting the front i-ZnO and by damaging the p-n junction-Reference-Cited by-同舟云学术

Potential-induced degradation of Cu(In,Ga)Se2 can occur by shunting the front i-ZnO and by damaging the p-n junction

Published:2022-01 Issue: Volume:232 Page:298-303
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Muzzillo Christopher P.^ORCID,Terwilliger Kent,Hacke Peter,Moutinho Helio R.,Young Matthew R.^ORCID,Glynn Stephen,Stevens Bart,Repins Ingrid L.,Mansfield Lorelle M.^ORCID

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference46 articles.

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4. Why and how to adapt PID testing for bifacial PV modules?;Carolus;Progr. Photovolt.: Res. Appl.,2020

5. The role of sodium in photovoltaic devices under high voltage stress: A holistic approach to understand unsolved aspects;Colli;Renewable Energy,2013

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