Author:
Wang Qinqin,Wu Wangping,Li Yunpeng,Yuan Ling,Yang Sanchuan,Sun Yufeng,Yang Songbo,Zhang Qiang,Cao Yujia,Qu Hui,Yuan Ningyi,Ding Jianning
Funder
Natural Science Foundation of Jiangsu Province
National Key Research and Development Program of China
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment
Reference68 articles.
1. Boron Selective Emitter Formation With Un-metallized J0e of 13fA/cm2 For Silicon Solar Cell Applications;Upadhyaya,2020
2. Numerical modeling of highly doped Si: P emitters based on Fermi-Dirac statistics and self-consistent material parameters;Altermatt;J. Appl. Phys.,2002
3. Modeling and analysis of the emitter boron process under BCl3 and O2 for industrial silicon cells applications;Armand,2011
4. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters;Benick;Appl. Phys. Lett.,2008
5. Bock R., Altermatt P.P., Schmidt J., 2008. Accurate extraction of doping profiles from electrochemical capacitance voltage measurements. in: Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, pp. 1510–1513.
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献