Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
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Elsevier
Reference65 articles.
1. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates;Albert;Appl. Phys. Lett.,2011
2. Ordered GaN/InGaN nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission;Albert;Int. J. High Speed Electron. Syst.,2012
3. Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies;Albert;Appl. Phys. Lett.,2012
4. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns;Albert;Appl. Phys. Lett.,2013
5. Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission;Albert;J. Appl. Phys.,2013
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1. Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2023-06
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3. Selective Area Growth of GaN Nanowires on Graphene Nanodots;Crystal Growth & Design;2019-12-18
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