Built-in electric field effect in wurtzite InGaN/GaN coupled quantum dots
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference23 articles.
1. InGaN/GaN multi-quantum dot light-emitting diodes
2. Dynamics of single InGaN quantum dots
3. Selective growth of GaInN quantum dot structures
4. Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy
5. Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
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1. Optical absorption properties in multi-layer InGaN/GaN core-shell quantum dots: The influences of ternary mixed crystal effect and hydrogen-like impurity;Micro and Nanostructures;2024-11
2. Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity;Nano-Micro Letters;2023-10-09
3. Carrier screening effects on intersubband nonlinear optical rectification in wurtzite InGaN/GaN coupling quantum wells;Solid State Communications;2022-02
4. Ultralow threshold blue quantum dot lasers: what’s the true recipe for success?;Nanophotonics;2020-09-03
5. Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures*;Chinese Physics B;2020-07-01
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