Dynamics of single InGaN quantum dots-Reference-Cited by-同舟云学术

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Dynamics of single InGaN quantum dots

Published:2004-03 Issue:2-4 Volume:21 Page:285-289
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Taylor R.A,Robinson J.W,Rice J.H,Jarjour A,Smith J.D,Oliver R.A,Briggs G.A.D,Kappers M.J,Humphreys C.J,Arakawa Y

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Progress in GaN-based quantum dots for optoelectronics applications

2. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

3. Growth kinetics and optical properties of self-organized GaN quantum dots

4. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

5. Narrow photoluminescence peaks from localized states in InGaN quantum dot structures

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