Effect of pressure and temperature on spin-dependent tunneling in InAs/GaAs heterostructure with Dresselhaus spin-orbit interaction
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference20 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. Effect of Barrier Width on Spin-Dependent Tunneling in Asymmetrical Double Barrier Semiconductor Heterostructures
3. Electron spin operation by electric fields: spin dynamics and spin injection
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1. GaAs quantum transport: Scrutinizing the effects of pressure, temperature and Rashba-Dresselhaus spin-orbit interactions for next-generation spintronic devices;Physica B: Condensed Matter;2024-12
2. Theoretical studies on the effects of pressure, temperature, and aluminum concentration on the optical absorption, refractive index and group velocity within GaAs/Ga1−xAlxAs quantum ring in the presence of Rashba spin–orbit interaction;Optical and Quantum Electronics;2023-11-23
3. Application of the Lewis-Riesenfeld quantum mechanical invariant method for description of electron tunneling transport in nitride multilayer quantum well nanostructures;Physics Letters A;2023-11
4. Pressure effect on spin-resonant tunneling of holes in CdTe/Cd1-xMnxTe double-barrier heterostructure;Physica B: Condensed Matter;2022-01
5. Magnetic Field and Hydrostatic Pressure Effects on Electron Transport in Heterostructure Based on InAs/GaAs Triple Barriers with Dresselhaus Interaction;Arabian Journal for Science and Engineering;2021-01-03
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