Magnetic Field and Hydrostatic Pressure Effects on Electron Transport in Heterostructure Based on InAs/GaAs Triple Barriers with Dresselhaus Interaction-Reference-Cited by-同舟云学术

Magnetic Field and Hydrostatic Pressure Effects on Electron Transport in Heterostructure Based on InAs/GaAs Triple Barriers with Dresselhaus Interaction

Published:2021-01-03 Issue:6 Volume:46 Page:5969-5975
ISSN:2193-567X
Container-title:Arabian Journal for Science and Engineering
language:en
Short-container-title:Arab J Sci Eng

Author:

Dakhlaoui Hassen^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://link.springer.com/content/pdf/10.1007/s13369-020-05168-0.pdf

Reference27 articles.

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3. Wang, L.G.; Yang, W.; Chang, K.; Chan, K.S.: Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect. Phys. Rev. B 72, 153314, 2005. https://doi.org/10.1103/PhysRevB.72.153314.

4. Ting, D.Z.Y.; Cartoixa, X.; Watson, T.J.: Bidirectional resonant tunneling spin pump. Appl. Phys. Lett. 83, 1391, 2003. https://doi.org/10.1063/1.1602158.

5. Ye, C.Z.; Zhang, C.X.; Nie, Y.-H.: JQ Liang Field-assisted resonance tunneling through a symmetric double-barrier structure with spin-orbit coupling. Phys. Rev. B 76, 035345, 2007. https://doi.org/10.1103/PhysRevB.76.035345.

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