Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN-Reference-Cited by-同舟云学术

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Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN

Published:2000-05 Issue: Volume:87-89 Page:1192-1195
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Kaschner A,Holst J,Hoffmann A,Broser I,Fischer P,Bertram F,Riemann T,Christen J,Hiramatsu K,Shibata T,Sawaki N

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference14 articles.

1. The Blue Laser Diode;Nakamura,1997

2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

4. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

5. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal‐Organic Vapor Phase Epitaxy;physica status solidi (b);2019-03-06

2. Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature;Optik;2016-02

3. Time resolved microscopic cathodoluminescence spectroscopy for phosphor research;Physica B: Condensed Matter;2014-04

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