Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution-Reference-Cited by-同舟云学术

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Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

Published:2000-05 Issue: Volume:87-89 Page:1196-1198
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Izumi T,Narukawa Y,Okamoto K,Kawakami Y,Fujita Sg,Nakamura S

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference6 articles.

1. InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

2. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

3. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

4. Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

5. Excitonic emissions from hexagonal GaN epitaxial layers

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1. Highly Enhanced Light Emissions from InGaN/GaN Based on Nanophotonics and Plasmonics;Progress in Nanophotonics 6;2021

2. Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si;Journal of Physics: Photonics;2020-06-03

3. Anharmonic decay of high-frequency LA modes in quasi-isotropic III-nitrides;Journal of Physics: Condensed Matter;2020-02-17

4. Origin of temperature-induced luminescence peak shifts from semipolar (112¯2) InxGa1−xN quantum wells;Physical Review B;2017-09-18

5. Near-field transport imaging applied to photovoltaic materials;Solar Energy;2017-09

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