Temperature dependence of photoluminescence of layer semiconductor p-GaTe
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference12 articles.
1. Some Optical Properties of Layer-Type Semiconductor GaTe
2. Electrical and optical characteristics of a schottky barrier on a cleaved surface of the layered semiconductor InSe
3. Near-band-edge optical properties ofGaSexTe1−xmixed crystals
4. Time-resolved exciton photoluminescence in GaSe and GaTe
5. Temperature dependence of the energy gap in semiconductors
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2. Wavelength‐Dependent Anisotropic Optical Properties in Layered GaTe for Polarization‐Sensitive Applications;Advanced Photonics Research;2021-10-05
3. Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection;ACS Applied Nano Materials;2021-08-19
4. Hybrid functional calculations of electro-optical properties of novel Ga1−xInxTe ternary chalcogenides;Applied Physics A;2020-05
5. On the studies of capacitance-voltage-temperature and deep level characteristics of an Au/p-GaTe Schottky diode;Journal of Alloys and Compounds;2017-02
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