Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si:Er:O diodes-Reference-Cited by-同舟云学术

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Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si:Er:O diodes

Published:1998-12 Issue:1-4 Volume:80 Page:315-319
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Sobolev N.A.,Nikolaev Yu.A.,Emel'yanov A.M.,Shtel'makh K.F.,Khakuashev P.E.,Trishenkov M.A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference5 articles.

1. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

2. Room‐temperature electroluminescence from Er‐doped crystalline Si

3. Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes

4. Avalanche breakdown-related electroluminescence in single crystal Si:Er:O

5. Photon Emission from Avalanche Breakdown in Silicon

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p +/n +/n-Si:Er;Semiconductors;2010-11

2. Er3+ Doping conditions of planar porous silicon waveguides;Applied Surface Science;2009-11

3. Point and extended defects engineering as a key to advancing the technology of light-emitting diodes based on single-crystal Si and SiGe layers;Physica B: Condensed Matter;2007-12

4. Erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures;Semiconductors;2007-11

5. Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2006-11

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