Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p +/n +/n-Si:Er-Reference-Cited by-同舟云学术

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Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p +/n +/n-Si:Er

Published:2010-11 Issue:11 Volume:44 Page:1486-1491
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shmagin V. B.,Kuznetsov V. P.,Kudryavtsev K. E.,Obolensky S. V.,Kozlov V. A.,Krasil’nik Z. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610110217.pdf

Reference17 articles.

1. A. Polman, J. Appl. Phys. 81, 1 (1997).

2. A. J. Kenyon, Semicond. Sci. Technol. 20, R65 (2005).

3. N. Q. Vinh, N. N. Ha, and T. Gregorkiewicz, Proc. IEEE 97, 1269 (2009).

4. G. Franzo, F. Priolo, S. Coffa, A. Polman, and A. Carnera, Appl. Phys. Lett. 64, 2235 (1994).

5. J. Stimmer, A. Reittinger, J. F. Nutzel, H. Holzbrecher, Ch. Buchal, and G. Abstreiter, Appl. Phys. Lett. 68, 3290 (1996).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Urbach absorption edge in epitaxial erbium-doped silicon;Journal of Applied Physics;2015-02-07

2. Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon p-n junction;Semiconductors;2012-01

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