Effective drift current densities in the n-type heavily doped emitter region of p−n+ junction silicon solar cells
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference18 articles.
1. Transport equations in the heavily doped region;van Overstaeten;IEEE Trans. Electron Devices,1973
2. Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors;Shibib;IEEE Trans. Electron Devices,1979
3. The importance of surface recombination and energy-bandgap narrowing in p−n junction silicon solar cells;Fossum;IEEE Trans. Electron Devices,1979
4. Fermi energy and band-tail parameters in heavily doped semiconductors;Van Cong;J. Phys. Chem. Solids,1975
5. Impurity band structure in degenerate semiconductors for both dense donors and acceptors;Van Cong;Phys. Status Solidi A,1979
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1. Effects of impurity size and heavy doping on energy-band-structure parameters of various impurity-Si systems;Physica B: Condensed Matter;2016-04
2. A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices;Physica Status Solidi (a);1995-06-16
3. Transport Parameters in the n-Type Moderately Doped Region of Silicon Devices at 300 K;physica status solidi (b);1983-06-01
4. Band-Gap Narrowing in n-Type Moderately Doped Silicon at 300 K;physica status solidi (b);1983-06-01
5. Effective electric field in the n-type moderately doped region of silicon devices at 300 K;physica status solidi (b);1983-05-01
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