A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. The emitter efficiency of bipolar transistors
2. Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
3. An analytic model for minority-carrier transport in heavily doped regions of silicon devices
4. A new solution for minority-carrier injection into the emitter of a bipolar transistor
5. Heavy doping effects in bipolar silicon transistors and p–n junction silicon solar cells
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