Temperature dependence of dark and illuminated current-voltage characteristics of grating-type min MIS silicon solar cells
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
1. High-efficiency silicon minMIS solar cells—Design and experimental results
2. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory
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1. The forward bias current density–voltage–temperature (J–V–T) characteristics of Al–SiO2–pSi (MIS) Schottky diodes;International Journal of Electronics;2011-06
2. Electrical characterization of novel Si solar cells;Thin Solid Films;2006-07
3. Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells;Solar Energy Materials and Solar Cells;2005-01
4. Temperature dependent electrical characteristics of AlSiOxpSi solar cells;Solar Energy Materials and Solar Cells;1994-02
5. Temperature dependence of the photovoltaic characteristics of silicon MIS solar cells;Solar Energy Materials;1989-05
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