The forward bias current density–voltage–temperature (J–V–T) characteristics of Al–SiO2–pSi (MIS) Schottky diodes
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2011.560555
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1. Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100)
2. Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency
3. The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
4. The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes
5. Spray-deposited ITO—Silicon SIS heterojunction solar cells
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