A theory for the simultaneous determination of the minority carrier lifetime, diffusion length and diffusion constant in a semiconducting medium using a modulated light beam-Reference-Cited by-同舟云学术

A theory for the simultaneous determination of the minority carrier lifetime, diffusion length and diffusion constant in a semiconducting medium using a modulated light beam

Published:1987-05 Issue:4 Volume:20 Page:279-287
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Kaur Ravdeep,Garg Suresh,Ahmed Feroz

Publisher

Elsevier BV

Subject

General Engineering

Reference18 articles.

1. Fundamentals of Solar Cells;Fahrenbruch,1983

2. Injected Current Carrier Transport in a Semi‐Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities

3. Cathodoluminescence at p‐n Junctions in GaAs

4. Electron‐Beam Excited Minority‐Carrier Diffusion Profiles in Semiconductors

5. Use of Schottky‐diode collectors for SEM determination of bulk diffusion lengths

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1. Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells;Solar Energy Materials and Solar Cells;1999-03

2. On the validity of simple theoretical relations used for analysing the intensity modulated photoresponse of a semiconductor;Solar Energy Materials and Solar Cells;1993-01

3. A method for the determination of the material parameters τ, D, L0, S and a from measured A.C. short-circuit photocurrent;Solar Cells;1988-10

4. A general theory of an intensity-modulated beam method for determination of diffusion length, diffusion constant, lifetime, surface recombination velocity and absorption coefficient in a semiconductor material;Solid-State Electronics;1988-09