A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon-Reference-Cited by-同舟云学术

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A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

Published:1987-04 Issue:3 Volume:20 Page:167-176
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Dugas J.,Oualid J.

Publisher

Elsevier BV

Subject

General Engineering

Reference22 articles.

1. Influence of illumination on the grain boundary recombination velocity in silicon

2. Proc. 11th IEEE Photovoltaic Specialists' Conf.;Soclof,1975

3. Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination

4. Theory of the electrical and photovoltaic properties of polycrystalline silicon

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