Towards a unified low-field model for carrier mobilities in crystalline silicon

Author:

Schindler Florian,Forster Maxime,Broisch Juliane,Schön Jonas,Giesecke Johannes,Rein Stefan,Warta Wilhelm,Schubert Martin C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A unified mobility model for device simulation – I. Model equations and concentration dependence;Klaassen;Solid-State Electron.,1992

2. Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon;Libal;J. Appl. Phys.,2008

3. F. Schindler, J. Geilker, W. Kwapil, J.A. Giesecke, M.C. Schubert, W. Warta, Conductivity mobility and Hall mobility in Compensated multicrystalline silicon, in: Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 2010, pp. 2364–2368.

4. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation;Veirman;Solid-State Electron.,2010

5. Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications;Forster;Phys. Status Solidi (c),2011

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