Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Iron and its complexes in silicon;Istratov;Applied Physics A–Materials Science and Processing,1999
2. Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing;Macdonald;Applied Physics Letters,2008
3. Electronically controlled reactions of interstitial iron in silicon;Kimerling;Physica B and C,1983
4. Formation rates of iron-acceptor pairs in crystalline silicon;Macdonald;Journal of Applied Physics,2005
5. Chemical interactions among defects in germanium and silicon;Reiss;Bell System Technical Journal,1956
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