Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices-Reference-Cited by-同舟云学术

Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

Published:2009-09 Issue:9 Volume:93 Page:1572-1581
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Proskuryakov Y.Y.,Durose K.,Major J.D.,Al Turkestani M.K.,Barrioz V.,Irvine S.J.C.,Jones E.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference39 articles.

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3. Study of buried junction and uniformity effects in CdTe/CdS solar cells using a combined OBIC and EQE apparatus;Major;Thin Solid Films,2009

4. Purification of CdTe from tellurium-rich solutions;Zanio;J. Electron. Mater.,1974

5. P.R. Edwards, D.P. Halliday, K. Durose, H. Richter, D. Bonnet, The influence of CdCl2 treatment and interdiffusion on grain boundary passivation in CdTe/CdS solar cells, in: Proceedings of the 14th Photovoltaic Solar Energy Conversion Conference, Barcelona, 1997, Published: WIP, vol. II, p. 2083.

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