Investigating the degradation behaviours of n+-doped Poly-Si passivation layers: An outlook on long-term stability and accelerated recovery
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Upgrade PERC with TOPCon: efficiency potential by taking into account the electrical gains and optical losses, 36th;Messmer;Eur. PV Sol. Energy Conf. Exhib.,2019
2. 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design;Chen;Sol. Energy Mater. Sol. Cells,2020
3. Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon;Chen;Sol. Energy Mater. Sol. Cells,2018
4. Hydrogen-induced degradation: explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon;Chen;Sol. Energy Mater. Sol. Cells,2020
5. Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon;Sio;Sol. Energy Mater. Sol. Cells,2018
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1. Long-term stability of TOPCon solar cell precursor structures based on Ga-doped Cz-Si;Solar Energy Materials and Solar Cells;2024-12
2. Hydrogen thermal activation of defects enabling firing stable Poly-Si based passivating contacts for TOPCon solar cells;Solar Energy;2024-09
3. Carrier‐Induced Degradation;Photovoltaic Solar Energy;2024-06-21
4. Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers;Solar Energy Materials and Solar Cells;2023-05
5. Design considerations for the bottom cell in perovskite/silicon tandems: a terawatt scalability perspective;Energy & Environmental Science;2023
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