Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells-Reference-Cited by-同舟云学术

Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells

Published:2021-09 Issue: Volume:230 Page:111229
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Zhi Yuyan,Zheng Jingming,Liao Mingdun,Wang Wei,Liu Zunke,Ma Dian,Feng Mengmeng,Lu Linna,Yuan Shengzhao,Wan Yimao,Yan Baojie,Wang Yuming,Chen Hui,Yao Meiyi,Zeng Yuheng,Ye Jichun

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference34 articles.

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4. Excessive light-induced degradation in boron-doped Cz silicon PERC triggered by dark annealing;Fertig;Sol. Energy Mater. Sol. Cell.,2019

5. Comparison of boron‐ and gallium‐doped p‐type Czochralski silicon for photovoltaic application;Glunz;Prog. Photovoltaics Res. Appl.,1999

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3. Current status and challenges for hole-selective poly-silicon based passivating contacts;Applied Physics Reviews;2024-02-09

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