Bandgap grading and Al0.3Ga0.7As heterojunction emitter for highly efficient GaAs-based solar cells-Reference-Cited by-同舟云学术

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Bandgap grading and Al0.3Ga0.7As heterojunction emitter for highly efficient GaAs-based solar cells

Published:2016-10 Issue: Volume:155 Page:264-272
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Hwang Sun-Tae,Kim Soohyun,Cheun Hyeunseok,Lee Hyun,Lee Byungho,Hwang Taehyun,Lee Sangheon,Yoon Wonki,Lee Heon-Min,Park Byungwoo

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Solar cell efficiency tables (Version 47);Green;Prog. Photovolt. : Res. Appl.,2016

2. Solar energy conversion toward 1 terawatt;Ginley;MRS Bull.,2008

3. Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%;Leite;Appl. Phys. Lett.,2013

4. A review of ultrahigh efficiency III–V semiconductor compound solar cells: multijunction tandem, lower dimensional, photonic up/down conversion and plasmonic nanometallic structures;Tanabe;Energies,2009

5. Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells;Park;Prog. Photovolt.: Res. Appl.,2015

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